#MG300Q1US11 Toshiba MG300Q1US11 New IGBT: 300A1200V, MG300Q1US11 pictures, MG300Q1US11 price, #MG300Q1US11 supplier
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Email: [email protected] [email protected]
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Email: [email protected] [email protected]
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MG300Q1US11 Description
MG300Q1US11, V(ces): 1200V V(ges): 20V 2000W insulated gate bipolar transistor. For high power switching and motor control applications
MG300Q1US11 1.03 lbs
Target_Applications
MG300Q1US11 could be used in High Power Switching Applications Motor Control Applications
Features
INSULATED GATE BIPOLAR TRANSISTOR
IGBT: 300A1200V
Shunlongwei Inspected Every MG300Q1US11 Before Ship, All MG300Q1US11 with 6 months warranty.
