GaN Systems and BMW sign semiconductor capacity agreement

GaN Systems and BMW sign Semiconductor capacity agreement

GaN Systems and BMW sign semiconductor capacity agreement

GaN Systems has signed a comprehensive capacity agreement with BMW Group for the company’s high-performance, automotive-grade GaN power transistors.

Under the terms of the agreement, GaN Systems is to provide capacity for multiple applications in series production – guaranteed volumes are essential when it comes to the automotive supply chain.

According to BMW, GaN Systems’ power semiconductors provide the small size, lightweight, and high efficiency that are required in the next generation of high-performance electric vehicles.

“Electric vehicles represent the future of transportation, and we are delighted to continue to support BMW with our design and production capacity,” said Jim Witham, CEO of GaN Systems. “This multi-$100m agreement demonstrates BMW’s commitment to innovation and sustainability.”

BMW started working with GaN Systems over four years ago when it started to use the company’s onboard chargers, DC/DC converters, and traction inverters. BMW’s venture capital firm, BMW I Ventures, later invested in the company to support and accelerate the automotive qualification of the GaN technology.

Commenting Kasper Sage, managing partner BMW i Ventures said, “As electric vehicles become more prominent, the demand for critical semiconductor components is only going to increase, thereby making strategic partnerships with suppliers like GaN Systems even more important.”

Author: William